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CHARVOT, J. ZAZPE MENDIOROZ, R. MACÁK, J. BUREŠ, F.
Originální název
Organoselenium Precursors for Atomic Layer Deposition
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
Organoselenium compounds with perspective application as Se precursors for atomic layer deposition have been reviewed. The originally limited portfolio of available Se precursors such as H2Se and diethyl(di)selenide has recently been extended by bis trialkylsilyl)selenides, bis(trialkylstannyl)selenides, cyclic selenides, and tetrakis(N,N-dimethyldithiocarbamate)-selenium. Their structural aspects, property tuning, fundamental properties, and preparations are discussed. It turned out that symmetric four- and six-membered cyclic silyl selenides possess well-balanced reactivity/stability, facile and cost-effective synthesis starting from inexpensive and readily available chlorosilanes, improved resistance toward air and moisture, easy handling, sufficient volatility, thermal resistance, and complete gas-to-solid phase exchange reaction with MoCl5, affording MoSe2 nanostructures. These properties make them the most promising Se precursor developed for atomic layer deposition so far.
Klíčová slova
Organoselenium compounds
Autoři
CHARVOT, J.; ZAZPE MENDIOROZ, R.; MACÁK, J.; BUREŠ, F.
Vydáno
16. 3. 2021
Nakladatel
American Chemical Society
Místo
WASHINGTON
ISSN
2470-1343
Periodikum
ACS OMEGA
Ročník
6
Číslo
10
Stát
Spojené státy americké
Strany od
6554
Strany do
6558
Strany počet
5
URL
https://pubs.acs.org/doi/10.1021/acsomega.1c00223
Plný text v Digitální knihovně
http://hdl.handle.net/11012/202274
BibTex
@article{BUT173123, author="Jaroslav {Charvot} and Raúl {Zazpe Mendioroz} and Jan {Macák} and Filip {Bureš}", title="Organoselenium Precursors for Atomic Layer Deposition", journal="ACS OMEGA", year="2021", volume="6", number="10", pages="6554--6558", doi="10.1021/acsomega.1c00223", issn="2470-1343", url="https://pubs.acs.org/doi/10.1021/acsomega.1c00223" }