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ALLAHAM, M. BUCHNER, P. SCHREINER, R. KNÁPEK, A.
Originální název
Testing the performance of Murphy-Good plots when applied to current-voltage characteristics of Si field electron emission tips
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
Murphy-Good plots are the most recent type of the analysis methods in the field electron emission theory, this type of plots has several useful characteristics such as: having the very-nearly straight line to represent the current-voltage characteristics and the absence of the correction factors in the mathematical procedure of the analysis process. In this study, n-type <111> and <100> Si chips containing four individual emitters are used as base emitters and mounted in a diode configuration field emission setup where the experiments are operated in an ultra-high vacuum (~10 -7 Pa). Each chip has four individual controllable emitters with 5 µm distance between the Si tips and the same material grid. Laser micromachining and subsequent wet chemical etching technique is used to structure and polish the tips. Murphy-Good plots are used to study the behavior of the Si individual tips and compare the results with the array current by extracting the field emission characterization parameters of the emitters.
Klíčová slova
Si field emitters; cathode current; grid current; Murphy-Good analysis; field emisison
Autoři
ALLAHAM, M.; BUCHNER, P.; SCHREINER, R.; KNÁPEK, A.
Vydáno
17. 11. 2021
Nakladatel
2021 34th International Vacuum Nanoelectronics Conference (IVNC)
Místo
Lyon, France
ISBN
978-1-6654-2589-6
Kniha
ISSN
2380-6311
Periodikum
Stát
Spojené státy americké
Strany od
1
Strany do
2
Strany počet
URL
https://ieeexplore.ieee.org/document/9600690
BibTex
@inproceedings{BUT175227, author="Mohammad Mahmoud {Allaham} and Philipp {Buchner} and Rupert {Schreiner} and Alexandr {Knápek}", title="Testing the performance of Murphy-Good plots when applied to current-voltage characteristics of Si field electron emission tips", booktitle="2021 34th International Vacuum Nanoelectronics Conference (IVNC)", year="2021", journal="2021 34th International Vacuum Nanoelectronics Conference (IVNC)", pages="1--2", publisher="2021 34th International Vacuum Nanoelectronics Conference (IVNC)", address="Lyon, France", doi="10.1109/IVNC52431.2021.9600690", isbn="978-1-6654-2589-6", issn="2380-6311", url="https://ieeexplore.ieee.org/document/9600690" }