Detail publikace

Nonthermal tetravinylsilane plasma used for thin-film deposition: Plasma chemistry controls thin-film chemistry

ČECH, V. BRÁNECKÝ, M.

Originální název

Nonthermal tetravinylsilane plasma used for thin-film deposition: Plasma chemistry controls thin-film chemistry

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

The power dependence of the plasma species in nonthermal tetravinylsilane plasmas used for thin-film deposition is investigated by mass spectrometry. Mass spectra analysis reveals the dominant carbon and silicon-containing species responsible for film growth. The deposition rate determined by in situ spectroscopic ellipsometry correlates with the flux of these species chemisorbed on the film surface if distinct sticking coefficients are taken into account. Then, the carbon to silicon ratio in the deposited film strongly correlates with the C/Si flux ratio for the various power-controlled plasmas. Similarly, the concentration of vinyl groups incorporated into the deposited film and the proportion of sp2 hybridization of the carbon network correlate with the fluxes of the respective plasma species.

Klíčová slova

mass spectrometry; non-thermal plasma; organosilicon precursors; plasma-enhanced chemical vapor deposition (PECVD); thin films

Autoři

ČECH, V.; BRÁNECKÝ, M.

Vydáno

28. 12. 2021

Nakladatel

Wiley

ISSN

1612-8869

Periodikum

Plasma Processes and Polymers

Číslo

e2100192

Stát

Spolková republika Německo

Strany od

1

Strany do

13

Strany počet

13

URL

https://onlinelibrary.wiley.com/doi/10.1002/ppap.202100192

BibTex

@article{BUT175877,
  author="Vladimír {Čech} and Martin {Bránecký}",
  title="Nonthermal tetravinylsilane plasma used for thin-film deposition: Plasma chemistry controls thin-film chemistry",
  journal="Plasma Processes and Polymers",
  year="2021",
  number="e2100192",
  pages="1--13",
  doi="10.1002/ppap.202100192",
  issn="1612-8869",
  url="https://onlinelibrary.wiley.com/doi/10.1002/ppap.202100192"
}