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KUNC, J. REJHON, M. DĚDIČ, V. BÁBOR, P.
Originální název
Thickness of sublimation grown SiC layers measured by scanning Raman spectroscopy
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
We have grown homoepitaxial high resistivity SiC layers on conducting SiC substrates. We develop a method to determine the thickness of grown layers by scanning confocal Raman spectroscopy (SCRS). We also grow epitaxial graphene on SiC layers to label the top sample surface, and, we correlate the top surface position with Rayleigh scattering (RS). The interface between the high resistivity SiC layer and conductive SiC substrate is probed by the transition from LO phonon to the coupled LO phonon-plasmon Raman mode. The layer thickness measurements are verified by ellipsometry and Secondary Ion Mass Spectroscopy (SIMS). We show that the SCRS method provides superior lateral and vertical resolution, it is robust against errorneous conclusions based on ad-hoc models, and it is easy to implement. (C) 2019 Elsevier B.V. All rights reserved.
Klíčová slova
SiC layer thickness; Graphene; Raman spectroscopy
Autoři
KUNC, J.; REJHON, M.; DĚDIČ, V.; BÁBOR, P.
Vydáno
15. 6. 2019
Nakladatel
ELSEVIER SCIENCE SA
Místo
LAUSANNE
ISSN
0925-8388
Periodikum
Journal of Alloys and Compounds
Ročník
789
Číslo
1
Stát
Švýcarská konfederace
Strany od
607
Strany do
612
Strany počet
6
URL
https://www.sciencedirect.com/science/article/pii/S0925838819307716
BibTex
@article{BUT177520, author="Jan {Kunc} and Martin {Rejhon} and Václav {Dědič} and Petr {Bábor}", title="Thickness of sublimation grown SiC layers measured by scanning Raman spectroscopy", journal="Journal of Alloys and Compounds", year="2019", volume="789", number="1", pages="607--612", doi="10.1016/j.jallcom.2019.02.305", issn="0925-8388", url="https://www.sciencedirect.com/science/article/pii/S0925838819307716" }