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ROY, R. HOLEC, D. KRATZER, M. MUENZER, P. KAUSHIK, P. MICHAL, L. KUMAR, G. ZAJÍČKOVÁ, L. TEICHERT, C.
Originální název
Probing the charge transfer and electron-hole asymmetry in graphene-graphene quantum dot heterostructure
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
In recent years, graphene-based van der Waals (vdW) heterostructures have come into prominence showcasing interesting charge transfer dynamics which is significant for optoelectronic applications. These novel structures are highly tunable depending on several factors such as the combination of the two-dimensional materials, the number of layers and band alignment exhibiting interfacial charge transfer dynamics. Here, we report on a novel graphene based 0D-2D vdW heterostructure between graphene and amine-functionalized graphene quantum dots (GQD) to investigate the interfacial charge transfer and doping possibilities. Using a combination of ab initio simulations and Kelvin probe force microscopy (KPFM) measurements, we confirm that the incorporation of functional GQDs leads to a charge transfer induced p-type doping in graphene. A shift of the Dirac point by 0.05 eV with respect to the Fermi level (E (F)) in the graphene from the heterostructure was deduced from the calculated density of states. KPFM measurements revealed an increment in the surface potential of the GQD in the 0D-2D heterostructure by 29 mV with respect to graphene. Furthermore, we conducted power dependent Raman spectroscopy for both graphene and the heterostructure samples. An optical doping-induced gating effect resulted in a stiffening of the G band for electrons and holes in both samples (graphene and the heterostructure), suggesting a breakdown of the adiabatic Born-Oppenheimer approximation. Moreover, charge imbalance and renormalization of the electron-hole dispersion under the additional influence of the doped functional GQDs is pointing to an asymmetry in conduction and carrier mobility.
Klíčová slova
graphene; graphene quantum dots; scanning probe microscopy; charge transfer; ab initio
Autoři
ROY, R.; HOLEC, D.; KRATZER, M.; MUENZER, P.; KAUSHIK, P.; MICHAL, L.; KUMAR, G.; ZAJÍČKOVÁ, L.; TEICHERT, C.
Vydáno
6. 8. 2022
Nakladatel
IOP Publishing Ltd
Místo
BRISTOL
ISSN
0957-4484
Periodikum
NANOTECHNOLOGY
Ročník
33
Číslo
32
Stát
Spojené království Velké Británie a Severního Irska
Strany od
325704-1
Strany do
325704-9
Strany počet
9
URL
https://iopscience.iop.org/article/10.1088/1361-6528/ac6c38