Detail publikace

Graphene removal by water-assisted Focused-Electron-Beam-Induced Etching – unveiling the dose and dwell time impact on etch profile and the topographical changes in SiO2 substrate

Aleksandra Szkudlarek, Jan M Michalik, Inés Serrano Esparza, Zdeněk Nováček, Veronika Novotná, Piotr Ozga, Czeslaw Kapusta, José María De Teressa

Originální název

Graphene removal by water-assisted Focused-Electron-Beam-Induced Etching – unveiling the dose and dwell time impact on etch profile and the topographical changes in SiO2 substrate

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Graphene is one of the most extensively studied 2D materials, exhibiting extraordinary mechanical and electronic properties. Although many years have passed since its discovery, manipulating single graphene layers is still challenging using standard resist-based lithography techniques. Recently, it has been shown that it is possible to etch graphene directly in the water-assisted process using so-called Focused Electron Beam Induced Etching (FEBIE), with a spatial resolution of ten nanometers. Nanopatterning graphene with such a method in one single step and without using a physical mask or resist is a very appealing approach. During the process, on top of graphene nanopatterning, we have found significant morphological changes induced in the SiO2 substrate even at low values of electron dose < 8 nC/μm2. We demonstrate that graphene etching and topographical changes in SiO2 substrate can be controlled via electron beam parameters such as dwell time and dose.

Klíčová slova

graphene, nanopatterning, etching, electron dose, dwell time, maskless lithography, direct writing

Autoři

Aleksandra Szkudlarek, Jan M Michalik, Inés Serrano Esparza, Zdeněk Nováček, Veronika Novotná, Piotr Ozga, Czeslaw Kapusta, José María De Teressa

Vydáno

7. 2. 2024

Nakladatel

Beilstein-Institut Zur Forderung der Chemischen Wissenschaften

ISSN

2190-4286

Periodikum

Beilstein Journal of Nanotechnology

Ročník

15

Číslo

neuvedeno

Stát

Spolková republika Německo

Strany od

190

Strany do

198

Strany počet

9

URL

https://www.beilstein-journals.org/bjnano/content/pdf/2190-4286-15-18.pdf

BibTex

@article{BUT185282,
  author="Veronika {Novotná}",
  title="Graphene removal by water-assisted Focused-Electron-Beam-Induced Etching – unveiling the dose and dwell time impact on etch profile and the topographical changes in SiO2 substrate",
  journal="Beilstein Journal of Nanotechnology",
  year="2024",
  volume="15",
  number="neuvedeno",
  pages="190--198",
  doi="10.3762/bjnano.15.18",
  issn="2190-4286",
  url="https://www.beilstein-journals.org/bjnano/content/pdf/2190-4286-15-18.pdf"
}