Detail publikace

Local electrical characteristic of memristor structure in a high-resistance state obtained using electrostatic force microscopy: Fractal and multifractal dynamics of surface

RAMAZANOV, S. ORUDZEV, F. GAJIEV, G. HOLCMAN, V. MATOS, R.S. FONSECA, H.D.D. TALU, S. SELIMOV, D.

Originální název

Local electrical characteristic of memristor structure in a high-resistance state obtained using electrostatic force microscopy: Fractal and multifractal dynamics of surface

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

A heterostructure BiFeO3/TiO2(Nt)Ti (BFOT) was obtained by the atomic layer deposition (ALD) method. After thermal treatment, the redistribution of Fe/Ti atoms forms an Aurivillius intermediate layered phase, and local charge capture centers are formed in the sample. Due to cationic non-stoichiometry, the BFO film exhibits p-type conductivity, while the nanotubes exhibit n-type conductivity due to oxygen vacancies. It was observed that lateral displacement of the sample can lead to ferroelectric switching, which can, in turn, affect the transition of the memristive structure from high-resistance (HRS) to low-resistance states (LRS). The hysteresis suppression tends to transition to an ohmic character and depends on the amplitude, frequency, and duration of the periodic signal. It has been found that compensation of static charge during resistive switching can affect the transport properties of the material. Fractal dimension analysis showed an acceleration of structure restructuring with increasing voltage, possibly contributing to the transition from an insulator to a metal in certain areas of the film volume. The joint analysis of piezoresponse force microscopy (PFM), electrostatic force microscopy (EFM), and fractal/multifractal dynamics showed a correlation between surface static charge and piezopotential. The new methodology described in this work can help understand the resistive switching processes in ferroelectric/ semiconductor memristive structures.

Klíčová slova

Heterostructure; Memristor; EFM; PFM; Resistive switching; Space charge

Autoři

RAMAZANOV, S.; ORUDZEV, F.; GAJIEV, G.; HOLCMAN, V.; MATOS, R.S.; FONSECA, H.D.D.; TALU, S.; SELIMOV, D.

Vydáno

9. 11. 2023

Nakladatel

ELSEVIER

Místo

AMSTERDAM

ISSN

0169-4332

Periodikum

Applied Surface Science

Ročník

647

Číslo

Únor 2024

Stát

Nizozemsko

Strany od

1

Strany do

12

Strany počet

12

URL

https://www.sciencedirect.com/science/article/pii/S0169433223025436?via%3Dihub

BibTex

@article{BUT186945,
  author="RAMAZANOV, S. and ORUDZEV, F. and GAJIEV, G. and HOLCMAN, V. and MATOS, R.S. and FONSECA, H.D.D. and TALU, S. and SELIMOV, D.",
  title="Local electrical characteristic of memristor structure in a high-resistance state obtained using electrostatic force microscopy: Fractal and multifractal dynamics of surface",
  journal="Applied Surface Science",
  year="2023",
  volume="647",
  number="Únor 2024",
  pages="1--12",
  doi="10.1016/j.apsusc.2023.158863",
  issn="0169-4332",
  url="https://www.sciencedirect.com/science/article/pii/S0169433223025436?via%3Dihub"
}