Detail publikace

Investigation of the Influence of Dam and Fill Encapsulating Material Shrinkage on a Semiconductor Substrate Warpage

OTÁHAL, A. GABLECH, I. SKÁCEL, J. SZENDIUCH, I.

Originální název

Investigation of the Influence of Dam and Fill Encapsulating Material Shrinkage on a Semiconductor Substrate Warpage

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This paper deals with the investigation of encapsulation material after curing shrinkage influence on a semiconductor die warpage. Dam and Fill method for encapsulation was used in this work. The bending deformation phenomenon is caused by stress due to the shrinkage of the encapsulation material. This stress is determined by the deformation of a square-shaped semiconductor board (20x20) mm from the point of view of the Z axis. After the last step of the samples preparation, 5 samples were cracked and 5 other samples were measured. Profilometer was used for warpage measurement where results were implemented to ANSYS Workbench simulation model. The output of the work is the basic methodology of measurement, simulation and evaluation to determine von-Mises stress from the warpage of semiconductor carrier. Results from this work will help with the prediction of semiconductor die warpage due to encapsulation material cure shrinkage and silicon substrate parameters.

Klíčová slova

bare die; encapsulation; shrinkage; stress; warpage

Autoři

OTÁHAL, A.; GABLECH, I.; SKÁCEL, J.; SZENDIUCH, I.

Vydáno

10. 5. 2023

ISBN

979-8-3503-3484-5

Kniha

Proceedings of the International Spring Seminar on Electronics Technology

Strany počet

5

BibTex

@inproceedings{BUT187823,
  author="Alexandr {Otáhal} and Imrich {Gablech} and Josef {Skácel} and Ivan {Szendiuch}",
  title="Investigation of the Influence of Dam and Fill Encapsulating Material Shrinkage on a Semiconductor Substrate Warpage",
  booktitle="Proceedings of the International Spring Seminar on Electronics Technology",
  year="2023",
  pages="5",
  doi="10.1109/ISSE57496.2023.10168456",
  isbn="979-8-3503-3484-5"
}