Detail publikace

Engineering 2D Material Exciton Line Shape with Graphene/h-BN Encapsulation

Woo, SY. Shao, FH. Arora, A. Schneider, R. Wu, NJ. Mayne, AJ. Ho, CH. Och, M. Mattevi, C. Reserbat-Plantey, A. Moreno, A. Sheinfux, HH. Watanabe, K. Taniguchi, T. de Vasconcellos, SM. Koppens, FHL. Niu, ZC. Stéphan, O. Kociak, M. de Abajo, FJG. Bratschitsch, R . Konecná, A. Tizei, LHG.

Originální název

Engineering 2D Material Exciton Line Shape with Graphene/h-BN Encapsulation

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Here, the near-field coupling between TMDs and graphene/graphite is used to engineer the exciton line shape and charge state. Fano-like asymmetric spectral features are produced in WS2, MoSe2, and WSe2 van der Waals heterostructures combined with graphene, graphite, or jointly with hexagonal boron nitride (h-BN) as supporting or encapsulating layers. Furthermore, trion emission is suppressed in h-BN encapsulated WSe2/graphene with a neutral exciton red shift (44 meV) and binding energy reduction (30 meV). The response of these systems to electron beam and light probes is well-described in terms of 2D optical conductivities of the involved materials. Beyond fundamental insights into the interaction of TMD excitons with structured environments, this study opens an unexplored avenue toward shaping the spectral profile of narrow optical modes for application in nanophotonic devices.

Klíčová slova

two-dimensional materials; transition metal dichalcogenides; electron energy-loss spectroscopy; excitons; van der Waals heterostructure

Autoři

Woo, SY.; Shao, FH.; Arora, A.; Schneider, R.; Wu, NJ.; Mayne, AJ.; Ho, CH.; Och, M.; Mattevi, C.; Reserbat-Plantey, A. ; Moreno, A.; Sheinfux, HH.; Watanabe, K.; Taniguchi, T.; de Vasconcellos, SM.; Koppens, FHL.; Niu, ZC.; Stéphan, O.; Kociak, M.; de Abajo, FJG.; Bratschitsch, R .; Konecná, A.; Tizei, LHG.

Vydáno

12. 3. 2024

Nakladatel

AMER CHEMICAL SOC

Místo

WASHINGTON

ISSN

1530-6992

Periodikum

Nano Letters

Ročník

24

Číslo

12

Stát

Spojené státy americké

Strany od

3678

Strany do

3685

Strany počet

8

URL

https://pubs.acs.org/doi/10.1021/acs.nanolett.3c05063

BibTex

@article{BUT188725,
  author="Woo, SY. and Shao, FH. and Arora, A. and Schneider, R. and Wu, NJ. and Mayne, AJ. and Ho, CH. and Och, M. and Mattevi, C. and Reserbat-Plantey, A. and Moreno, A. and Sheinfux, HH. and Watanabe, K. and Taniguchi, T. and de Vasconcellos, SM. and Koppens, FHL. and Niu, ZC. and Stéphan, O. and Kociak, M. and de Abajo, FJG. and Bratschitsch, R . and Konecná, A. and Tizei, LHG.",
  title="Engineering 2D Material Exciton Line Shape with Graphene/h-BN Encapsulation",
  journal="Nano Letters",
  year="2024",
  volume="24",
  number="12",
  pages="3678--3685",
  doi="10.1021/acs.nanolett.3c05063",
  issn="1530-6992",
  url="https://pubs.acs.org/doi/10.1021/acs.nanolett.3c05063"
}