Detail publikace

Ultrathin Indium Tin Oxide Accumulation Mode Electrolyte-Gated Transistors for Bioelectronics

MIGLIACCIO, L. SAY, M. PATHAK, G. GABLECH, I. BRODSKÝ, J. DONAHUE, M. GLOWACKI, E.

Originální název

Ultrathin Indium Tin Oxide Accumulation Mode Electrolyte-Gated Transistors for Bioelectronics

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Electrolyte-gated field effect transistors and electrochemical transistors have emerged as powerful components for bioelectronic sensors and biopotential recording devices. A set of parameters must be considered when developing devices to amplify weak electrophysiological signals. These include maximum transconductance values, cut-off frequencies, and large on/off current ratios. Organic polymer-based devices have recently dominated the field, especially when considering flexibility as a key factor. Oxide semiconductors may also offer these features, as well as advantages like higher mobility. Herein, flexible, ultrathin, indium tin oxide (ITO) electrolyte-gated transistors are reported. These accumulation-mode devices combine n-type operation with mu e = 9.5 cm2 Vs-1, high transconductance (gm = 44 mS), and on/off ratios (105) as well as optically transparent layouts. While oxides are normally considered brittle, mechanically flexible ITO layers are obtained by room temperature deposition of amorphous layers onto parylene C. This process results in low strain, producing devices that survive bending. ITO electrochemically degrades, however, with cycling. To overcome this, the surface is passivated with high dielectric constant inert capping layers of Ta2O5 or Ta2O5/AlN. This greatly improves stability while preserving low gate voltages. Based on their overall performance, ITO-based EGFETs are promising for bioelectronics. Conducting polymers is not the only way, inorganic oxides can make electrochemical transistors too. It is shown that ultrathin, flexible, ITO electrolyte-gated transistors are designed for bioelectronics. These transistors demonstrate high transconductance, excellent on/off ratios, and mechanical flexibility. Via surface passivation strategies are used to enhance the electrochemical stability of ITO, making these devices promising candidates for future in vivo and in vitro bioelectronic applications. image

Klíčová slova

Bioelectronics; electrolyte-gated transistor; electrochemical transistor; field-effect transistor; indium tin oxide

Autoři

MIGLIACCIO, L.; SAY, M.; PATHAK, G.; GABLECH, I.; BRODSKÝ, J.; DONAHUE, M.; GLOWACKI, E.

Vydáno

1. 2. 2025

Nakladatel

WILEY

Místo

HOBOKEN

ISSN

2365-709X

Periodikum

Advanced Materials Technologies

Ročník

10

Číslo

4

Stát

Spojené státy americké

Strany od

2302219

Strany do

2302227

Strany počet

9

URL

https://onlinelibrary.wiley.com/doi/10.1002/admt.202302219

BibTex

@article{BUT193514,
  author="Ludovico {Migliaccio} and Mehmet Girayhan {Say} and Gaurav {Pathak} and Imrich {Gablech} and Jan {Brodský} and Mary {Donahue} and Eric Daniel {Glowacki}",
  title="Ultrathin Indium Tin Oxide Accumulation Mode Electrolyte-Gated Transistors for Bioelectronics",
  journal="Advanced Materials Technologies",
  year="2025",
  volume="10",
  number="4",
  pages="9",
  doi="10.1002/admt.202302219",
  issn="2365-709X",
  url="https://onlinelibrary.wiley.com/doi/10.1002/admt.202302219"
}