Detail publikace
Preparation of GaN Nanocrystals with Single Ag Cores
ČALKOVSKÝ, V. MACH, J. BARTOŠÍK, M. PIASTEK, J. KOSTKA, M. MIKERÁSEK, V. SUPALOVÁ, L. KONEČNÝ, M. KVAPIL, M. HORÁK, M. ŠIKOLA, T.
Originální název
Preparation of GaN Nanocrystals with Single Ag Cores
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
We report on a low-temperature hybrid method for the preparation of GaN nanocrystals (NCs) with embedded single Ag cores. GaN growth is realized by a physical vapor deposition of Ga atoms on a SiO2 substrate with colloidal Ag nanoparticles on its surface, assisted with an ultralow energy (50 eV) nitrogen-ion-beam bombardment at temperatures being significantly lower (T < 350 degrees C) than in conventional GaN deposition techniques (e.g., MOCVD, 1000 degrees C). We call this method Low Temperature Droplet Epitaxy (LTDE). The low deposition temperature allows GaN nanocrystals to be prepared with embedded metal-aluminum colloidal nanoparticles as their cores. A combination of STEM, SEM, scanning Auger microscopy, XPS, and AFM was applied to characterize semiconductor and metal nanoparticles. By their implementation, we optimized morphology, structure, and chemical composition of these nanocrystals and, consequently, demonstrated their enhanced photoluminescent properties.
Klíčová slova
LIGHT-EMITTING-DIODES; SPECTROSCOPY; SILVER; ENHANCEMENT; AU
Autoři
ČALKOVSKÝ, V.; MACH, J.; BARTOŠÍK, M.; PIASTEK, J.; KOSTKA, M.; MIKERÁSEK, V.; SUPALOVÁ, L.; KONEČNÝ, M.; KVAPIL, M.; HORÁK, M.; ŠIKOLA, T.
Vydáno
12. 9. 2024
Nakladatel
AMER CHEMICAL SOC
Místo
WASHINGTON
ISSN
1528-7505
Periodikum
Crystal Growth and Design
Ročník
24
Číslo
19
Stát
Spojené státy americké
Strany od
7904
Strany do
7909
Strany počet
6
URL
BibTex
@article{BUT196734,
author="Vojtěch {Čalkovský} and Jindřich {Mach} and Miroslav {Bartošík} and Jakub {Piastek} and Marek {Kostka} and Vojtěch {Mikerásek} and Linda {Supalová} and Martin {Konečný} and Michal {Kvapil} and Michal {Horák} and Tomáš {Šikola}",
title="Preparation of GaN Nanocrystals with Single Ag Cores",
journal="Crystal Growth and Design",
year="2024",
volume="24",
number="19",
pages="7904--7909",
doi="10.1021/acs.cgd.4c00776",
issn="1528-7505",
url="https://pubs.acs.org/doi/10.1021/acs.cgd.4c00776"
}