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RECMAN M.
Originální název
Electrical model parameter correlations assesment using DESSIS
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
The electrical model parameter extraction methodology proffitting from DESSIS device simulation techniques and HSPICE optimization procedures is presented. The described method based on the DESSIS-HSPICE link enables to search HSPICE model parameter correlations due to technology parameters variation. The link is capable to transform large amounts of data from DESSIS to HSPICE needed in described simple experiment. The electrical model parameters dependence on selected diode technology parameter is calculated and displayed. The individual steps to create, mesh, and simulate diode structure, transform electrical data from DESSIS to HSPICE, extract model parameters for each technology parameter value and display the results are described.
Klíčová slova
device simulation, circuit simulation, model parameters extraction
Autoři
Rok RIV
2005
Vydáno
1. 1. 2005
Nakladatel
Nakl. Novotný
Místo
Brno
ISBN
80-214-3042-7
Kniha
Socrates Workshop 2005, Intensive Training Programme in Electronic System Design – Proceedings
Strany od
68
Strany do
71
Strany počet
4
BibTex
@inproceedings{BUT20417, author="Milan {Recman}", title="Electrical model parameter correlations assesment using DESSIS", booktitle="Socrates Workshop 2005, Intensive Training Programme in Electronic System Design – Proceedings", year="2005", pages="4", publisher="Nakl. Novotný", address="Brno", isbn="80-214-3042-7" }