Detail publikace

The Nanoscale Double-Gate MOSFET.

Richard Ficek, Michal Horák

Originální název

The Nanoscale Double-Gate MOSFET.

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This paper directs attention to an analytically compact model for the nanoscale double-gate metal-oxide semiconductor field effect transistor based on McKelvey’s flux theory. The general goal is to present completed characteristics of Double-Gate MOSFET. The model is continuous above and below threshold and from linear to saturation regions. Most importantly, it describes nanoscale MOSFET from the diffusive to ballistic regimes. Paper involved simulations of current voltages characteristics dependent on its parameters, 3D model structure and exploring the limits.

Klíčová slova

Double-Gate MOSFET

Autoři

Richard Ficek, Michal Horák

Rok RIV

2005

Vydáno

23. 9. 2005

Nakladatel

Technological Institute of Chania

Místo

Chania

ISBN

80-214-3042-7

Kniha

Intensive Training Programme in Electronic System Design

Strany od

158

Strany do

162

Strany počet

5

BibTex

@inproceedings{BUT20917,
  author="Richard {Ficek} and Michal {Horák}",
  title="The Nanoscale Double-Gate MOSFET.",
  booktitle="Intensive Training Programme in Electronic System Design",
  year="2005",
  pages="5",
  publisher="Technological Institute of Chania",
  address="Chania",
  isbn="80-214-3042-7"
}