NOISE IN SUBMICRON MOSFETS: RTS's AS THE ULTIMATE COMPONENTS OF THE 1/f NOISE

článek ve sborníku ve WoS nebo Scopus

angličtina

A large amount of experimental results show that for MOSFET's with channel area exceeding 10 mikrom2, 1/f noise is clearly present. On the other hand, for transistors of area less than 1 mikrom2, Random Telegraph Signals (RTS) are appearing, giving rise to lorentzian spectra. A relation is established between the level of 1/f noise and the defectiveness of the device. In this paper, we emphasize on critical question, if the RTS's are the ultimate components of the 1/f noise. Experiments were carried out for n-channel devices, processed in a 0.35 mm spacerless CMOS technology. The investigated devices have a gate oxide thickness of 20 nm and the effective interface area is estimated to be A = 0.1 mm2. The RTS measurements were performed: (i) in the linear operation mode, for low drain bias, where the drain current was changed from weak inversion up to strong inversion by varying the gate voltage Ug, with the source and substrate contact being grounded, and (ii) for constant gate voltage, where the drain current was changed by varying the drain voltage.

Defects, electromagnetic noise, field effect transistors, low frequencies, metal oxide semiconductors, noise intensity, noise spectra, electronic equipment, low noise, NOISE measurement, temperature effects, traps , models of 1/f noise

HAVRÁNEK, J.; PAVELKA, J.; TOFEL, P.; ŠIKULA, J.

2007

10. 8. 2007

University of Miskolc

Hungary, MIskolc

978-963-661-779-0

Proceedings of 6th international conference of PhD students

1

249

253

4