Detail publikace

Sputtered SiNx, AlN and SiC as passivation and ARC layers

HÉGR, O. BOUŠEK, J. FOŘT, T. PORUBA, A. BAŘINKA, R.

Originální název

Sputtered SiNx, AlN and SiC as passivation and ARC layers

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Different types of mono-crystalline solar cell surfaces are presented in this article. Reactively sputtered layers of different compositions (SiNx, AlN and SiC) are used for passivation coatings on both cells sides. Sputtering technology gives the possibility to replace high-temperature processes which decrease surface and bulk defect density. Consequently, sputtering results in higher solar cell efficiency. Surface and bulk recombination parameters were measured by means of microwave photoconductivity decay (MW-PCD).

Klíčová slova

silicon solar cell, surface passivation, sputtering, antireflection coating, silicon carbide, silicon nitride, aluminum nitride

Autoři

HÉGR, O.; BOUŠEK, J.; FOŘT, T.; PORUBA, A.; BAŘINKA, R.

Rok RIV

2007

Vydáno

20. 9. 2007

Nakladatel

Ing. Zdeněk Novotný CSc., Brno

Místo

Brno

ISBN

978-80-214-3470-7

Kniha

Electronic Devices and Systems EDS´07

Číslo edice

1

Strany od

164

Strany do

167

Strany počet

4

BibTex

@inproceedings{BUT24054,
  author="Ondřej {Hégr} and Jaroslav {Boušek} and Tomáš {Fořt} and Aleš {Poruba} and Radim {Bařinka}",
  title="Sputtered SiNx, AlN and SiC as passivation and ARC layers",
  booktitle="Electronic Devices and Systems EDS´07",
  year="2007",
  number="1",
  pages="4",
  publisher="Ing. Zdeněk Novotný CSc., Brno",
  address="Brno",
  isbn="978-80-214-3470-7"
}