Detail publikace

DIOS simulation of ion implantation

RECMAN Milan

Originální název

DIOS simulation of ion implantation

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The example of using process simulator DIOS to compare data of individual implantation and corresponding temperature annealing steps within diode structure creation is presented. The method based on the DIOS TECPLOT-ISE link enables to form an effective tool to compare data of individual process steps simulations as ion implantations and other. The described example of diode process steps simulation uses this link to compare total boron concentrations throghout the process. The individual DIOS process simulation steps including final boron profile creation are described. TECPLOT-ISE graphical postprocessor is used to display and compare the individual total boron concentrations.

Klíčová slova v angličtině

Device simulation, Electrical simulation, Parameter extraction, Device modeling, Curve fitting, Device optimization

Autoři

RECMAN Milan

Vydáno

1. 1. 2006

Nakladatel

Nakl. Novotný

Místo

Brno

ISBN

960-8025-99-8

Kniha

Electronic System Design 2006, Socrates International Conference Proceedings Chania, October 16 – 17, 2006, Greece

Strany od

80

Strany do

83

Strany počet

4

BibTex

@inproceedings{BUT24695,
  author="Milan {Recman}",
  title="DIOS simulation of ion implantation",
  booktitle="Electronic System Design 2006, Socrates International Conference Proceedings Chania, October 16 – 17, 2006, Greece",
  year="2006",
  pages="4",
  publisher="Nakl. Novotný",
  address="Brno",
  isbn="960-8025-99-8"
}