Detail publikace

NMOS sensitivity analysis

RECMAN Milan

Originální název

NMOS sensitivity analysis

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The example of using ISE TCAD package to analyze how the variability of process parameters may affect the variability of the threshold voltage simulation response is presented. The real 0.15 µm CMOS technology for low-power application is used. The NMOS transistor structure is generated using ISE TCAD tools DIOS and MDRAW. DESSIS and INSPECT are used to generate device output electrical characteristics and extract analyzed responses. OPTIMISE generates relevant TCAD experiments and calculates sensitivities of threshold voltage to individual process parameters selected.

Klíčová slova v angličtině

Device simulation, Electrical simulation, Parameter extraction, Device modeling, Curve fitting, Device optimization, Process simulation, 2D, Automatic grid generation, Sensitivity analysis.

Autoři

RECMAN Milan

Vydáno

1. 1. 2006

Nakladatel

Nakl. Novotný

Místo

Brno

ISBN

960-8025-99-8

Kniha

Electronic System Design 2006, Socrates International Conference Proceedings Chania, October 16 – 17, 2006, Greece

Strany od

84

Strany do

87

Strany počet

4

BibTex

@inproceedings{BUT24696,
  author="Milan {Recman}",
  title="NMOS sensitivity analysis",
  booktitle="Electronic System Design 2006, Socrates International Conference Proceedings Chania, October 16 – 17, 2006, Greece",
  year="2006",
  pages="4",
  publisher="Nakl. Novotný",
  address="Brno",
  isbn="960-8025-99-8"
}