Detail publikace

Fast Transients in Testing of Silicon Solar Cells

J.Bousek, A. Poruba

Originální název

Fast Transients in Testing of Silicon Solar Cells

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

In solar cell diagnostic the parameters as the reverse breakdown voltage, depletion layer width and capacitance, serial and parallel resistance and lifetime of minority carriers are of great importance. Characterization of solar cells based on evaluation of solar cell response to fast transients is described. The measurement and evaluation procedure is very simple and no expensive devices are needed. Because relatively high doping level by standard silicon solar cells a voltage bias in the range 400 – 500 mV is needed.to cancel the influence of the depletion layer capacitance The voltage bias was made with dark current bias or with light bias.

Klíčová slova

Krystalický křemík, Solární články, Doba života minoritních nosičů, Průrazné napětí

Klíčová slova v angličtině

Crystalline Silicon Solar Cells; Lifetime of minority carriers; Breakdown Voltage

Autoři

J.Bousek, A. Poruba

Rok RIV

2006

Vydáno

14. 9. 2006

Nakladatel

Nakl. Z. Novotný

ISBN

80-214-3246-2

Kniha

Proceedings EDS °06

Strany od

461

Strany do

466

Strany počet

6

BibTex

@inproceedings{BUT24716,
  author="Jaroslav {Boušek} and Aleš {Poruba}",
  title="Fast Transients in Testing of Silicon Solar Cells",
  booktitle="Proceedings EDS °06",
  year="2006",
  pages="6",
  publisher="Nakl. Z. Novotný",
  isbn="80-214-3246-2"
}