Detail publikace

TCAD simulation using van Dort quantum correction model

RECMAN, M.

Originální název

TCAD simulation using van Dort quantum correction model

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Some features of current MOSFETs (oxide thickness, channel width) have reached quantum mechanical length scales. Therefore, the wave nature of electrons and holes can no longer be neglected. The contribution deals with TCAD simulation of quantum corrections (QC) in the MOSFET channel. This effect is described by the phenomenological van Dort model, which accounts for the size quantization by increasing the effective band gap in the high-field region. The method to activate the van Dort model in DESSIS and to extract the threshold voltage increase and the subthreshold current reduction due to QC is described. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tool INSPECT.

Klíčová slova

Device simulation, Electrical simulation, Parameter extraction, Device modeling, Curve fitting, Device optimization. 2D, Threshold voltage, Quantum corrections,Van Dort model, DESSIS

Autoři

RECMAN, M.

Rok RIV

2007

Vydáno

1. 1. 2007

Nakladatel

nakl. Novotný

Místo

Brno

ISBN

978-80-214-3470-7

Kniha

Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007

Strany od

437

Strany do

441

Strany počet

5

BibTex

@inproceedings{BUT25395,
  author="Milan {Recman}",
  title="TCAD simulation using van Dort quantum correction model",
  booktitle="Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007",
  year="2007",
  pages="437--441",
  publisher="nakl. Novotný",
  address="Brno",
  isbn="978-80-214-3470-7"
}