Detail publikace

Modeling of quantization effects in NMOSFET channel

RECMAN, M.

Originální název

Modeling of quantization effects in NMOSFET channel

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

In short channel NMOSFET simulations, the threshold voltage is increased if the quantization effects are present. The contribution describes the influence of quantum mechanical size quantization effects in NMOSFET channel on the electrical properties of NMOS transistor. Normal drift diffusion simulation (neglecting quantum effects), simulations including quantum correction models (van Dort model, the density gradient model) and the simulation including direct solution of the Schroedinger equation are compared. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tools TECPLOT and INSPECT.

Klíčová slova

Device simulation, Electrical simulation, Parameter extraction, Device modeling, Curve fitting, 2D, Threshold voltage, Quantization effects, Van Dort model, Density gradient model, Schroedinger-Poisson solver

Autoři

RECMAN, M.

Rok RIV

2007

Vydáno

1. 1. 2007

Nakladatel

Nakl. Novotný

Místo

Brno

ISBN

978-80-214-3470-7

Kniha

Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007

Strany od

442

Strany do

446

Strany počet

5

BibTex

@inproceedings{BUT25396,
  author="Milan {Recman}",
  title="Modeling of quantization effects in NMOSFET channel",
  booktitle="Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007",
  year="2007",
  pages="5",
  publisher="Nakl. Novotný",
  address="Brno",
  isbn="978-80-214-3470-7"
}