Detail publikace

Impact ionization in GaAsP PN junctions

KOKTAVÝ, P. KOKTAVÝ, B.

Originální název

Impact ionization in GaAsP PN junctions

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bi-stable mechanism thus may be used as an efficient tool to evaluate the PN junction inhomogeneity.

Klíčová slova

Impact ionization, microplasma noise, diagnostics, PN junction

Autoři

KOKTAVÝ, P.; KOKTAVÝ, B.

Rok RIV

2007

Vydáno

4. 9. 2007

Nakladatel

CERM

Místo

Brno

ISBN

978-80-7204-537-2

Kniha

Physical and Material Engineering 2007, International Workshop

Strany od

131

Strany do

134

Strany počet

4

BibTex

@inproceedings{BUT27975,
  author="Pavel {Koktavý} and Bohumil {Koktavý}",
  title="Impact ionization in GaAsP PN junctions",
  booktitle="Physical and Material Engineering 2007, International Workshop",
  year="2007",
  pages="131--134",
  publisher="CERM",
  address="Brno",
  isbn="978-80-7204-537-2"
}