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KOKTAVÝ, P. KOKTAVÝ, B.
Originální název
Impact ionization in GaAsP PN junctions
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bi-stable mechanism thus may be used as an efficient tool to evaluate the PN junction inhomogeneity.
Klíčová slova
Impact ionization, microplasma noise, diagnostics, PN junction
Autoři
KOKTAVÝ, P.; KOKTAVÝ, B.
Rok RIV
2007
Vydáno
4. 9. 2007
Nakladatel
CERM
Místo
Brno
ISBN
978-80-7204-537-2
Kniha
Physical and Material Engineering 2007, International Workshop
Strany od
131
Strany do
134
Strany počet
4
BibTex
@inproceedings{BUT27975, author="Pavel {Koktavý} and Bohumil {Koktavý}", title="Impact ionization in GaAsP PN junctions", booktitle="Physical and Material Engineering 2007, International Workshop", year="2007", pages="131--134", publisher="CERM", address="Brno", isbn="978-80-7204-537-2" }