Detail publikace

A Study of Thin Oxide Films by Ellipsometry and AR XPS

TICHOPÁDEK, P., ŠIKOLA, T., NEBOJSA, A., NAVRÁTIL, K., JURKOVIČ, P., ČECHAL, J.

Originální název

A Study of Thin Oxide Films by Ellipsometry and AR XPS

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.

Klíčová slova v angličtině

spectroscopic ellipsometry, AR XPS, ultrathin films

Autoři

TICHOPÁDEK, P., ŠIKOLA, T., NEBOJSA, A., NAVRÁTIL, K., JURKOVIČ, P., ČECHAL, J.

Rok RIV

2001

Vydáno

30. 9. 2001

Nakladatel

P. Marcus, A. Galtayries, N. Frémy

Místo

Avignon, France

Strany od

360

Strany do

360

Strany počet

1

BibTex

@inproceedings{BUT3314,
  author="Petr {Tichopádek} and Tomáš {Šikola} and Alois {Nebojsa} and Karel {Navrátil} and Patrik {Jurkovič} and Jan {Čechal}",
  title="A Study of Thin Oxide Films by Ellipsometry and AR XPS",
  booktitle="9th European Conference on Applications of Surface and Interface Analysis (ECASIA'01) Book of Abstracts",
  year="2001",
  pages="1",
  publisher="P. Marcus, A. Galtayries, N. Frémy",
  address="Avignon, France"
}