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ANDREEV, A. GRMELA, L. ŠIKULA, J. CHVÁTAL, M. RAŠKA, M.
Originální název
Bulk Resistance Decay in CdTe
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
Bulk resistance decay of cadmium telluride (CdTe) single crystals was investigated. The bulk resistance of each CdTe single crystal was measured during long time interval. The samples were placed into a cryostat. That allowed us to hold the temperature constant during the measurements and eliminate the illumination influence. The measurements started and were continued at 300 K and after some period of time it was sharply raised up to 390 K. We observed the resistance slow decreasing with time with temperature T = 300 K and T = 390 K. All the samples have very high value of relaxation time. The presented samples must have not one but four acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor levels or between the conductivity band and deep donor levels cause this long value of relaxation time.
Klíčová slova
CdTe single crystal; relaxation process; deep level defects
Autoři
ANDREEV, A.; GRMELA, L.; ŠIKULA, J.; CHVÁTAL, M.; RAŠKA, M.
Rok RIV
2009
Vydáno
18. 5. 2009
Nakladatel
Institute of Electrical and Electronics Engineers, St. Petersburg
Místo
St. Petersburg, Russia
ISBN
978-1-4244-3861-7
Kniha
IEEE EUROCON 2009
Strany od
1181
Strany do
1185
Strany počet
4
BibTex
@inproceedings{BUT33591, author="Alexey {Andreev} and Lubomír {Grmela} and Josef {Šikula} and Miloš {Chvátal} and Michal {Raška}", title="Bulk Resistance Decay in CdTe", booktitle="IEEE EUROCON 2009", year="2009", pages="1181--1185", publisher="Institute of Electrical and Electronics Engineers, St. Petersburg", address="St. Petersburg, Russia", isbn="978-1-4244-3861-7" }