Detail publikace

Semi-numerical simulation of silicon solar cells junction geometry using C-U profiling techniques

MACKŮ, R.

Originální název

Semi-numerical simulation of silicon solar cells junction geometry using C-U profiling techniques

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This paper reports issue of a geometry and pn junction position assessment in order to electro-optical properties optimalization for different applications. In addition, examination of the mentioned parameters may have fundamental matter to interpretation of unconventional electrical characteristic such as current-voltage curves or quantum efficient curves. Sample analysis, presented here, is based on experimental measurement of C-U curves and numerical simulation of impurities diffusion from gaseous state (assume constant gas pressure). We managed to get information about junction position and junction width even thought junction is strongly unsymmetrical and its part must be neglected in case of analytical solution. Last but not least, we discuss issue of reduction or/and expansion of junction width with reverse voltage due to surface geometrical texturizing. To this end, the microscopic study of the samples surface is presented, too.

Klíčová slova

solar cell characterization

Autoři

MACKŮ, R.

Rok RIV

2010

Vydáno

29. 4. 2010

Nakladatel

Novpress

Místo

Brno

ISBN

978-80-214-4080-7

Kniha

proceedings of the 16th conference student eeict 2010 vol. 5

Číslo edice

1

Strany od

217

Strany do

221

Strany počet

5

BibTex

@inproceedings{BUT34935,
  author="Robert {Macků}",
  title="Semi-numerical simulation of silicon solar cells junction geometry using C-U profiling techniques",
  booktitle="proceedings of the 16th conference student eeict 2010 vol. 5",
  year="2010",
  number="1",
  pages="217--221",
  publisher="Novpress",
  address="Brno",
  isbn="978-80-214-4080-7"
}