Transport and Noise properties of CdTe(Cl) Crystals

článek v časopise - ostatní, Jost

angličtina

Experimental studies of transport and noise characteristics of CdTe (Cl doped) crystals, prepared by travelling heater method, have been carried out. The basic material is of p-type with p = 1.8 x 10(14) m(-3), mu (h) = 0.0065 m(2) V-1 s(-1), mu (o) = 0.13 m(2) V-1 s(-1). The current and noise spectral density was measured as a function of the sample illumination, voltages across the sample and incident light wavelengths. Two types of effective charge carrier mobility are assumed: namely, the effectivetransport mobility, which is 0.065 m(2) V-1 s(-1) and the effective noise mobility, which reaches a value of 0.125 m(2) V-1 s(-1), both for high illumination. Under the same conditions, the density of light generated charge carrier pairs is 1.7 x 10(15)m(-3). Experimental results are in a good agreement with the four-level recombination model. The values of 1/f noise parameter alpha range from 4 x 10(-4) to 2.5 x 10(-3). The alpha parameter grows with almost the photocurrent square root.

CdTe, Cadmium telluride, II-VI compounds, Photo-conduction, 1/f noise parameter, Charge carrier density, Charge carrier mobility, Sensor, Detector

SCHAUER, P., ŠIKULA, J.

2001

1. 1. 2001

0026-2714

Microelectronics Reliability

41

3

Spojené království Velké Británie a Severního Irska

431

436

6