Přístupnostní navigace
E-přihláška
Vyhledávání Vyhledat Zavřít
Detail publikace
SPOUSTA, J., ŠIKOLA, T., ZLÁMAL, J., URBÁNEK, M., NAVRÁTIL, K., JIRUŠE, J., CHMELÍK, R., NEBOJSA, A.
Originální název
In situ measurements of surface homogeneity of optical parameters of weakly absorbing thin films
Typ
článek v časopise - ostatní, Jost
Jazyk
angličtina
Originální abstrakt
In the paper the instrument working on the principles of spectral reflectivity and designed in our group for in situ monitoring of surface homogeneity of optical parameters of weakly absorbing thin films was tested in a series of ex- and in situ experiments. The tests confirmed that it is a convenient tool for the in situ quasi-real time monitoring of surface homogeneity of thicknesses and optical parameters of small area thin films (up to 1 cm2) during their etching and growth. By this method a homogeneous growth of an SiO2 film with an average growth rate of 103 nm/hour in one pilot point during the deposition by ion beam sputtering of a quartz target was monitored in situ. On the other hand, the ion beam etching rate of the thermal SiO2 film was lower than 3.3 nm/min and the enhanced roughness of the etched film in comparison to the initial one was observed.
Klíčová slova v angličtině
spectroscopic reflectometry, surface homogeneity, in situ monitoring
Autoři
Rok RIV
2002
Vydáno
1. 8. 2002
ISSN
0142-2421
Periodikum
Surface and Interface Analysis
Ročník
34
Číslo
1
Stát
Spojené království Velké Británie a Severního Irska
Strany od
664
Strany do
667
Strany počet
4
BibTex
@article{BUT40891, author="Jiří {Spousta} and Tomáš {Šikola} and Jakub {Zlámal} and Michal {Urbánek} and Karel {Navrátil} and Jaroslav {Jiruše} and Radim {Chmelík} and Alois {Nebojsa}", title="In situ measurements of surface homogeneity of optical parameters of weakly absorbing thin films", journal="Surface and Interface Analysis", year="2002", volume="34", number="1", pages="4", issn="0142-2421" }