Detail publikace

Measurement of local photoluminescence and optically induced photocurrent in semiconductor structures

BENEŠOVÁ, M., DOBIS, P., TOMÁNEK, P., BRÜSTLOVÁ, J.

Originální název

Measurement of local photoluminescence and optically induced photocurrent in semiconductor structures

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Near-field local Photoluminescence (PL) and photocurrent (PC) spectroscopic techniques are used to study of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Nitrogen laser and tuning dye laser. r-SNOM employs an uncoated and/or Au-metallized single-mode fiber tip both as nanosource and a nanoprobe. Due to the high lateral resolution of the microscope, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.

Klíčová slova

near field, photoluminescence, induced photocurrent, semiconductor structures, local measurement

Autoři

BENEŠOVÁ, M., DOBIS, P., TOMÁNEK, P., BRÜSTLOVÁ, J.

Rok RIV

2002

Vydáno

26. 5. 2002

Nakladatel

Tech-Market,Praha

Místo

Praha

ISBN

80-86114-46-5

Kniha

Photonics Prague 2002

Strany od

146

Strany do

146

Strany počet

1

BibTex

@inproceedings{BUT4257,
  author="Markéta {Benešová} and Pavel {Dobis} and Pavel {Tománek} and Jitka {Brüstlová}",
  title="Measurement of local photoluminescence and optically induced photocurrent in semiconductor structures",
  booktitle="Photonics Prague 2002",
  year="2002",
  pages="146--146",
  publisher="Tech-Market,Praha",
  address="Praha",
  isbn="80-86114-46-5"
}