Detail publikace

Near-field study of carrier dynamics in InAs/GaAs quantum dots grown on InGaAs layers

TOMÁNEK, P. DOBIS, P. BENEŠOVÁ, M. GRMELA, L.

Originální název

Near-field study of carrier dynamics in InAs/GaAs quantum dots grown on InGaAs layers

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

InAs/GaAs quantum dots (QDs) with ordered structure, due to their peculiar properties, open new way to design novel semiconductor devices such as single-electron transistors or highly parallel computing architectures. The lateral quantum dot alignment achieved during the self-assembly process is not well understood heretofore. The reason is, that quantum structures are usually small and studied at low temperatures. Conversely, the Scanning near-field optical microscopy (SNOM) allows study nanometer details in the non-offensive manner, in the room temperature with high spatial and temporal resolution. The first results of near-field optical study on aligned QDs are presented.

Klíčová slova

semiconductor, InAs/GaAs, quantum dots, carrier dynamics, optical imaging, lateral superresolution, near-field optics

Autoři

TOMÁNEK, P.; DOBIS, P.; BENEŠOVÁ, M.; GRMELA, L.

Rok RIV

2005

Vydáno

15. 2. 2005

Nakladatel

TRANS TECH PUBLICATIONS LTD

Místo

Zurich-Uetikon

ISSN

0255-5476

Periodikum

Materials Science Forum

Ročník

482

Číslo

1

Stát

Švýcarská konfederace

Strany od

151

Strany do

155

Strany počet

4

BibTex

@article{BUT46457,
  author="Pavel {Tománek} and Pavel {Dobis} and Markéta {Benešová} and Lubomír {Grmela}",
  title="Near-field study of carrier dynamics in InAs/GaAs quantum dots grown on InGaAs layers",
  journal="Materials Science Forum",
  year="2005",
  volume="482",
  number="1",
  pages="151--155",
  issn="0255-5476"
}