Detail publikace

Sn-CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study

MAŠEK, K. VÁCLAVŮ, M. BÁBOR, P. MATOLÍN, V.

Originální název

Sn-CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Sn addition in the CeO2 thin film by simultaneous Sn metal and cerium oxide magnetron sputtering causes growth of Ce3+ rich films whilst pure cerium oxide sputtering provides stoichiometric CeO2 layers. Ce4+ - Ce3+ conversion is explained by a charge transfer from Sn atoms to unoccupied orbital Ce 4f0 of cerium oxide by forming Ce 4f1 state. XPS and SIMS revealed a formation of a new chemical Ce(Sn)+ state, which belongs to SnCeO2 species.

Klíčová slova

Cerium oxide; Tin-cerium mixed oxide; SIMS; XPS; Magnetron sputtering

Autoři

MAŠEK, K.; VÁCLAVŮ, M.; BÁBOR, P.; MATOLÍN, V.

Rok RIV

2009

Vydáno

15. 4. 2009

ISSN

0169-4332

Periodikum

Applied Surface Science

Ročník

255

Číslo

13-14

Stát

Nizozemsko

Strany od

6656

Strany do

6660

Strany počet

5

BibTex

@article{BUT47187,
  author="Karel {Mašek} and Michal {Václavů} and Petr {Bábor} and Vladimír {Matolín}",
  title="Sn-CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study",
  journal="Applied Surface Science",
  year="2009",
  volume="255",
  number="13-14",
  pages="6656--6660",
  issn="0169-4332"
}