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ČECHAL, J. MATLOCHA, T. POLČÁK, J. KOLÍBAL, M. TOMANEC, O. KALOUSEK, R. DUB, P. ŠIKOLA, T.
Originální název
Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis
Typ
článek v časopise - ostatní, Jost
Jazyk
angličtina
Originální abstrakt
Deposition and oxidation of metallic gallium droplets on Si(111) was studied by angle resolved X-ray photoelectron spectroscopy. Two gallium peaks - Ga 3d and Ga 2p - were simultaneously measured in order to get an advantage of different inelastic mean free paths of photoelectrons from these two energy levels differing in binding energy by 1100 eV. Together with the angular dependent data it enhances the precision of the size characterization of Ga droplets and oxide thickness determination. A model for the calculation of theoretical intensities based on an ellipsoidal shape of droplets is presented and a simple procedure for estimation of droplet height and actual surface coverage based on measurement on a single emission angle is suggested.
Klíčová slova
X-ray photoelectron spectroscopy, XPS; Gallium, Ga; Gallium Oxide, Ga2O3; Surface structures; Models; Calculations
Autoři
ČECHAL, J.; MATLOCHA, T.; POLČÁK, J.; KOLÍBAL, M.; TOMANEC, O.; KALOUSEK, R.; DUB, P.; ŠIKOLA, T.
Rok RIV
2009
Vydáno
30. 1. 2009
ISSN
0040-6090
Periodikum
Thin Solid Films
Ročník
517
Číslo
6
Stát
Nizozemsko
Strany od
1928
Strany do
1934
Strany počet
7
BibTex
@article{BUT48893, author="Jan {Čechal} and Tomáš {Matlocha} and Josef {Polčák} and Miroslav {Kolíbal} and Ondřej {Tomanec} and Radek {Kalousek} and Petr {Dub} and Tomáš {Šikola}", title="Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis", journal="Thin Solid Films", year="2009", volume="517", number="6", pages="1928--1934", issn="0040-6090" }