Detail publikace
Transmission Line on Semiconductor Substrate with Distributed Amplification
POKORNÝ, M. RAIDA, Z.
Originální název
Transmission Line on Semiconductor Substrate with Distributed Amplification
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
In order to compensate losses in metal strips, an active microstrip line on a semiconductor substrate is proposed, and its finite element model is presented. The active medium is provided by A3B5 semiconductor in high-intensity electric field. The propagation properties of the fundamental mode are computed and the thermal analysis is performed. The problem of system self-oscillation is discussed and empirical stability criteria are introduced. A proper heat-sink is proposed to provide the operation in a continuous regime.
Klíčová slova
GaAs, active, mictrostrip, millimeter-wave, FEM, Gunn, thermal, COMSOL
Autoři
POKORNÝ, M.; RAIDA, Z.
Rok RIV
2010
Vydáno
1. 6. 2010
Nakladatel
Ústav radioelektroniky, VUT v Brně
Místo
Brno
ISSN
1210-2512
Periodikum
Radioengineering
Ročník
19
Číslo
2
Stát
Česká republika
Strany od
307
Strany do
312
Strany počet
6
BibTex
@article{BUT49178,
author="Michal {Pokorný} and Zbyněk {Raida}",
title="Transmission Line on Semiconductor Substrate with Distributed Amplification",
journal="Radioengineering",
year="2010",
volume="19",
number="2",
pages="307--312",
issn="1210-2512"
}