Detail publikace

Transmission Line on Semiconductor Substrate with Distributed Amplification

POKORNÝ, M. RAIDA, Z.

Originální název

Transmission Line on Semiconductor Substrate with Distributed Amplification

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

In order to compensate losses in metal strips, an active microstrip line on a semiconductor substrate is proposed, and its finite element model is presented. The active medium is provided by A3B5 semiconductor in high-intensity electric field. The propagation properties of the fundamental mode are computed and the thermal analysis is performed. The problem of system self-oscillation is discussed and empirical stability criteria are introduced. A proper heat-sink is proposed to provide the operation in a continuous regime.

Klíčová slova

GaAs, active, mictrostrip, millimeter-wave, FEM, Gunn, thermal, COMSOL

Autoři

POKORNÝ, M.; RAIDA, Z.

Rok RIV

2010

Vydáno

1. 6. 2010

Nakladatel

Ústav radioelektroniky, VUT v Brně

Místo

Brno

ISSN

1210-2512

Periodikum

Radioengineering

Ročník

19

Číslo

2

Stát

Česká republika

Strany od

307

Strany do

312

Strany počet

6

BibTex

@article{BUT49178,
  author="Michal {Pokorný} and Zbyněk {Raida}",
  title="Transmission Line on Semiconductor Substrate with Distributed Amplification",
  journal="Radioengineering",
  year="2010",
  volume="19",
  number="2",
  pages="307--312",
  issn="1210-2512"
}