Detail publikace

Variable Lateral Silicon Controlled Rectifier as an ESD Protection

BĚŤÁK, P. MUSIL, V.

Originální název

Variable Lateral Silicon Controlled Rectifier as an ESD Protection

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

The Variable lateral Silicon Controlled Rectifier (VLSCR) is a SCR based structure with the possibility to tune I-V snapback characteristics. This effect is important for an ESD (electrostatic discharge) protection design. The ESD protection structures act as a protection of integrated circuits against parasitic electrostatic discharge. Among often used structures belong structures having snapback type of I-V characteristic. Typical is a gate-grounded NMOS transistor [3] or a SCR [3]. This text is dealing with the VLSCR structure which enables I-V snap-back characteristics tuning according to the application demand. Simulated technology was CMOS very high voltage (VHV Integrated Circuits). Measurement was done in BiCMOS process.

Klíčová slova

VLSCR, SCR ,ESD

Autoři

BĚŤÁK, P.; MUSIL, V.

Rok RIV

2008

Vydáno

1. 8. 2008

ISSN

1109-9445

Periodikum

WSEAS Transactions on Electronics

Ročník

5

Číslo

8

Stát

Spojené státy americké

Strany od

350

Strany do

359

Strany počet

10

BibTex

@article{BUT49442,
  author="Petr {Běťák} and Vladislav {Musil}",
  title="Variable Lateral Silicon Controlled Rectifier as an ESD Protection",
  journal="WSEAS Transactions on Electronics",
  year="2008",
  volume="5",
  number="8",
  pages="350--359",
  issn="1109-9445"
}