Detail publikace

Strain mapping by Scanning Low Energy Electron Microscopy

MIKMEKOVÁ, Š. MAN, O. PANTĚLEJEV, L. HOVORKA, M. MÜLLEROVÁ, I. FRANK, L. KOUŘIL, M.

Originální název

Strain mapping by Scanning Low Energy Electron Microscopy

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

The use of the scanning low energy electron microscopy (SLEEM) has been slowly making its way into the field of materials science, hampered not by limitations in the technique but rather by relative scarcity of these instruments in research institutes and laboratories. This paper reports the results obtained from an investigation of the microstructure of ultra fine-grained (UFG) copper fabricated using equal channel angular pressing (ECAP) method, namely in the as-pressed state and after annealing. SLEEM is very sensitive to the perfection of crystal lattice and using SLEEM, local strain can be effectively imaged.

Klíčová slova

scanning low energy electron microscopy (SLEEM), contrast of crystal orientation, microscopic strain

Autoři

MIKMEKOVÁ, Š.; MAN, O.; PANTĚLEJEV, L.; HOVORKA, M.; MÜLLEROVÁ, I.; FRANK, L.; KOUŘIL, M.

Rok RIV

2010

Vydáno

1. 3. 2011

Nakladatel

Trans Tech Publications

Místo

Switzerland

ISSN

1013-9826

Periodikum

Key Engineering Materials (print)

Ročník

465

Číslo

1

Stát

Švýcarská konfederace

Strany od

338

Strany do

341

Strany počet

4

BibTex

@article{BUT49965,
  author="Šárka {Mikmeková} and Ondřej {Man} and Libor {Pantělejev} and Miloš {Hovorka} and Ilona {Müllerová} and Luděk {Frank} and Miloslav {Kouřil}",
  title="Strain mapping by Scanning Low Energy Electron Microscopy",
  journal="Key Engineering Materials (print)",
  year="2011",
  volume="465",
  number="1",
  pages="338--341",
  issn="1013-9826"
}