Detail publikace

1/f noise models and low-frequency noise characteristics of InAlAs/ InGaAs devices

PAVELKA, J. TACANO, M. TANUMA, N. ŠIKULA, J.

Originální název

1/f noise models and low-frequency noise characteristics of InAlAs/ InGaAs devices

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Transport and low frequency noise characteristics of In0.52Al0.48As/InxGa1-xAs heterostructures were measured in wide temperature range (15 K to 450 K) and experi-mental results compared with intrinsic 1/f noise models, estimating mobility fluctuations due to various scattering processes.

Klíčová slova

1/f noise, g-r noise, InGaAs, compound semiconductors

Autoři

PAVELKA, J.; TACANO, M.; TANUMA, N.; ŠIKULA, J.

Rok RIV

2011

Vydáno

14. 2. 2011

Nakladatel

Wiley

Místo

Weinheim

ISSN

1610-1642

Periodikum

Physica Status Solidi C

Ročník

8

Číslo

2

Stát

Spolková republika Německo

Strany od

303

Strany do

305

Strany počet

3

BibTex

@article{BUT50236,
  author="Jan {Pavelka} and Munecazu {Tacano} and Nobuhisa {Tanuma} and Josef {Šikula}",
  title="1/f noise models and low-frequency noise characteristics of InAlAs/ InGaAs devices",
  journal="Physica Status Solidi C",
  year="2011",
  volume="8",
  number="2",
  pages="303--305",
  issn="1610-1642"
}