Detail publikace

Activation Energy of RTS Noise

PAVELKA, J. ŠIKULA, J. TACANO, M. TOITA, M.

Originální název

Activation Energy of RTS Noise

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Low frequency noise was measured in silicon MOSFET and GaN and InGaAs based HFET devices with special emphasis on the RTS noise. The RTS (Random Telegraph Signal) dependence on the biasing conditions and temperature was analyzed in order to obtain new information regarding production technology. From the time dependence of the RTS noise voltage the mean time of charge carriers capture and emission by traps in the gate oxide layer was determined as a function of applied gate and drain voltage or electron concentration and then several important trap parameters, such as activation energy and position in the channel could be estimated.

Klíčová slova

RTS noise, 1/f noise, trap, MOSFET, HFET

Autoři

PAVELKA, J.; ŠIKULA, J.; TACANO, M.; TOITA, M.

Rok RIV

2011

Vydáno

13. 4. 2011

ISSN

1210-2512

Periodikum

Radioengineering

Ročník

20

Číslo

1

Stát

Česká republika

Strany od

194

Strany do

199

Strany počet

6

BibTex

@article{BUT50267,
  author="Jan {Pavelka} and Josef {Šikula} and Munecazu {Tacano} and Masato {Toita}",
  title="Activation Energy of RTS Noise",
  journal="Radioengineering",
  year="2011",
  volume="20",
  number="1",
  pages="194--199",
  issn="1210-2512"
}