Detail publikace

Near-field local optical spectrosccopy of nanostructured semiconductors

TOMÁNEK, P., OTEVŘELOVÁ, D., GRMELA, L., BRÜSTLOVÁ, J., DOBIS, P.

Originální název

Near-field local optical spectrosccopy of nanostructured semiconductors

Typ

abstrakt

Jazyk

angličtina

Originální abstrakt

Probing optical properties of materials and optical characterization of crystallographic defects at the nanometer scale has been inaccessible until recently due to the diffraction limit of light. With the invention of Scanning near-field optical microscopy (SNOM), resolution at the 50-100 nm level using visible or near infrared light is now practical. In addition to describing the SNOM technique, this review focuses on some of the applications of SNOM to the characterization of electronic and photonic materials and devices, with particular emphasis on defects, which are difficult to visualize with other type of microscopes. The unique capability of SNOM to simultaneously measure surface topography and local optoelectronic properties, thereby eliminating the need to perform cross correlation analysis on results obtained using different techniques, is particularly useful in this area. Several examples are discussed. By performing near-field photocurrent (NPC) measurements, SNOM is used to probe electrical activities associated with individual threading dislocations and dislocation networks in strain relaxed, compositionally graded GeSi films. The non-destructive nature of SNOM helps elucidate how microstructural defects in the SrTiO3 bicrystal substrates affect YBa2Cu3O7 film growth and GBJJ performance. Characterization of III-V and II-VI semiconductors, quantum dots grown by strain epitaxy, laser diodes, waveguides, and photonic crystals is also included. The advantages and disadvantages of SNOM in each application will be outlined. Throughout the review, emphasis is placed on how SNOM complements existing materials characterization techniques, as well as how quantitative results can be obtained from SNOM measurements. This study was supported by Czech Ministry of Education, Youth and Sport under research plan MSM 262200022 and grants COST 523.40 and Kontakt ME 544.

Klíčová slova

optical near-field, spectroscopy, nanostructured semiconductor, quantum dots, carrier recombination.

Autoři

TOMÁNEK, P., OTEVŘELOVÁ, D., GRMELA, L., BRÜSTLOVÁ, J., DOBIS, P.

Vydáno

13. 10. 2004

Nakladatel

VUTIUM Brno

Místo

Brno

ISBN

80-214-2672-1

Kniha

Nano ´ 04

Strany od

40

Strany do

40

Strany počet

1

BibTex

@misc{BUT59978,
  author="Pavel {Tománek} and Dana {Otevřelová} and Lubomír {Grmela} and Jitka {Brüstlová} and Pavel {Dobis}",
  title="Near-field local optical spectrosccopy of nanostructured semiconductors",
  booktitle="Nano ´ 04",
  year="2004",
  pages="1",
  publisher="VUTIUM Brno",
  address="Brno",
  isbn="80-214-2672-1",
  note="abstract"
}