Detail publikace

Local photoluminescence measurements of semiconductor surface defects

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., BRÜSTLOVÁ, J., UHDEOVÁ, N.

Originální název

Local photoluminescence measurements of semiconductor surface defects

Typ

abstrakt

Jazyk

angličtina

Originální abstrakt

The applicability of Near-field scanning optical microscopy (NSOM) for optical characterization of semiconductors has been discussed. The NSOM technique and some of its properties relevant to real-time in-situ measurements are reviewed. Several optical characterization methods widely used in the far-field are evaluated for their use with NSOM.

Klíčová slova

photoluminescence, semiconductor, surface deffect, local measurement

Autoři

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., BRÜSTLOVÁ, J., UHDEOVÁ, N.

Vydáno

15. 9. 2003

Místo

Chernivtsy

Strany od

56

Strany do

56

Strany počet

1

BibTex

@misc{BUT60177,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Jitka {Brüstlová} and Naděžda {Uhdeová}",
  title="Local photoluminescence measurements of semiconductor surface defects",
  booktitle="Correlation optics 6",
  year="2003",
  series="Neuveden",
  edition="Neuveden",
  volume="Neuveden",
  pages="1",
  address="Chernivtsy",
  note="abstract"
}