Near-field photoluminescence as high resolution diagnostics of semiconductor structures

článek ve sborníku ve WoS nebo Scopus

angličtina

Scanning Near-field Optical Microscope, in which an uncoated single-mode fiber tip is used both as nanosource to excite the semiconductor sample and as nanoprobe to investigate characteristics of the structure and to pick up the photoluminescence (PL) reflected from the sample, is applied for the diagnostics of the defects in semiconductor devices. Using the high lateral resolution of the microscope with fast micro-photoluminiscence response, it is possible to locate non-luminescence defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured spectral PL intensity are also discussed.

Scanning near-field optical microscope, photoluminescence, quantum well structure, spectral photoluminescence intensity, subwavelength resolution

OTEVŘELOVÁ, D., DOBIS, P., BRÜSTLOVÁ, J., TOMÁNEK, P.

2001

27. 6. 2001

VUTIUM

Brno

80-24-14-1892-3

Proceedings of Materials structure and micromechanics of fracture

439

443

5