Detail publikace

The Tantalum Capacitor as a MIS Structure in Reverse Mode

ŠIKULA, J., PAVELKA, J., HLÁVKA, J., SEDLÁKOVÁ, V., GRMELA, L., TACANO, M., HASHIGUCHI, S.

Originální název

The Tantalum Capacitor as a MIS Structure in Reverse Mode

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The charge carrier transport mechanisms in a tantalum capacitor are discussed and VA characteristics both in normal and reverse mode are explained on the basis of metal (Ta) - insulator (Ta2O5) - semiconductor (MnO2) MIS structure model. The leakage current temperature dependencies were measured to determine energy band parameters.

Klíčová slova v angličtině

tantalum capacitor, MIS structure, leakage current

Autoři

ŠIKULA, J., PAVELKA, J., HLÁVKA, J., SEDLÁKOVÁ, V., GRMELA, L., TACANO, M., HASHIGUCHI, S.

Rok RIV

2001

Vydáno

1. 1. 2001

Nakladatel

Components Technology Institute, Inc.

Místo

Huntsville, Alabama, USA

ISBN

0887-7491

Kniha

Proceedings of 21st Capacitor and Resistor technology Symposium CARTS US 2001

Strany od

289

Strany do

292

Strany počet

4

BibTex

@inproceedings{BUT6872,
  author="Josef {Šikula} and Jan {Pavelka} and Jan {Hlávka} and Vlasta {Sedláková} and Lubomír {Grmela} and Munecazu {Tacano} and Sumihisa {Hashiguchi}",
  title="The Tantalum Capacitor as a MIS Structure in Reverse Mode",
  booktitle="Proceedings of 21st Capacitor and Resistor technology Symposium CARTS US 2001",
  year="2001",
  pages="4",
  publisher="Components Technology Institute, Inc.",
  address="Huntsville, Alabama, USA",
  isbn="0887-7491"
}