Detail publikace

Amplification Enhancement of Gunn Effect Based Active Transmission Lines

POKORNÝ, M. RAIDA, Z.

Originální název

Amplification Enhancement of Gunn Effect Based Active Transmission Lines

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

In this paper, we concentrate on the design and analysis of the active semiconductor traveling wave devices based on the Gunn effect in bulk GaAs semiconductor. The complex model of active device based on the macroscopic approximations of electron dynamics is analyzed by finite element method using COMSOL Multiphysics and the design issues to achieve an efficient amplification and device stability are formulated and discussed. Upon simulation results of the convectional active coplanar waveguide design based on the experimental work in [1],we propose more efficient solution.

Klíčová slova

Gunn effect, Active transmission line, GaAs, COMSOL

Autoři

POKORNÝ, M.; RAIDA, Z.

Vydáno

23. 5. 2011

Nakladatel

Aalto Univerzity of Finland

Místo

Finland

Strany od

1

Strany do

4

Strany počet

4

BibTex

@inproceedings{BUT73083,
  author="Michal {Pokorný} and Zbyněk {Raida}",
  title="Amplification Enhancement of Gunn Effect Based Active Transmission Lines",
  booktitle="Millimetre Wave Days Proceedings",
  year="2011",
  pages="1--4",
  publisher="Aalto Univerzity of Finland",
  address="Finland"
}