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BIOLEK, D. BAJER, J. BIOLKOVÁ, V. KOLKA, Z.
Originální název
Mutators for Transforming Nonlinear Resistor Into Memristor
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
A method of analogue emulation of the memristor with its prescribed charge (qM)-flux (phiM) constitutive relation is presented. The memristor is emulated via a resistor with nonlinear current (iR)-voltage (vR) relationship, and a mutator. The purpose of the mutator is to provide a similarity transformation of the current-voltage characteristic of the resistor into the constitutive relation of the memristor according to the equations qM=kyiR, phiM =kxvR, or phiM=kyiR, qM=kxvR, where kx, ky are real numbers fulfilling the condition kxky>0. It is shown that there are eight versions of these mutators. One of them is selected for experimental verification.
Klíčová slova
memristor, constitutive relation, mutator
Autoři
BIOLEK, D.; BAJER, J.; BIOLKOVÁ, V.; KOLKA, Z.
Rok RIV
2011
Vydáno
29. 8. 2011
Nakladatel
IEEE
Místo
Linkoping, Sweden
ISBN
9781457706189
Kniha
Proceedings of the ECCTD 2011
Strany od
488
Strany do
491
Strany počet
4
BibTex
@inproceedings{BUT73106, author="Dalibor {Biolek} and Josef {Bajer} and Viera {Biolková} and Zdeněk {Kolka}", title="Mutators for Transforming Nonlinear Resistor Into Memristor", booktitle="Proceedings of the ECCTD 2011", year="2011", pages="488--491", publisher="IEEE", address="Linkoping, Sweden", isbn="9781457706189" }