Near field scanning optical microscopy as an imaging tool for carrier process in silicon

článek ve sborníku ve WoS nebo Scopus

angličtina

Characteristic time variations of carrier processes, such as the recombination of excess carriers, of oxidized silicon are measured as a function of position using near-field scanning optical microscopy (NSOM). Typical time constants from the region imaged agree well with those obtained by conventional spatial-averaging techniques for a wide range of samples. Images locate defects, reveal variations, and can map the regions in which a particular recombination process is active. The technique will be reviewed including the limits of resolution and signal strength, with illustrations from a variety of samples. Carrier diffusion in confined layers, such as SOI samples, will be discussed.

excess carrier lifetime, recombination, dynamics, near-field scanning optical microscopy, local measurement, superresolution

BENEŠOVÁ, M., TOMÁNEK, P., OTEVŘELOVÁ, D., DOBIS, P., GRMELA, L.

2003

1. 6. 2003

Process Engineering Publisher

Praha

80-86059-35-9

Advanced engineering design

F1.3

F1.7

5