Detail publikace

Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)

LÉTAL, P., BRÜSTLOVÁ, J., TOMÁNEK, P., DOBIS, P., GRMELA, L.

Originální název

Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Locally resolved topography of semiconductor surface and jonction has been investigated and first results presnted.

Klíčová slova

near-field optics, spectroscopy, interface, semiconductor, superresolution

Autoři

LÉTAL, P., BRÜSTLOVÁ, J., TOMÁNEK, P., DOBIS, P., GRMELA, L.

Rok RIV

2003

Vydáno

10. 9. 1998

Místo

Brno

ISBN

80-214-1198-8

Kniha

Proc. of 5th Int.Conf. Electronic devices and systems 1998

Strany od

173

Strany do

176

Strany počet

4

BibTex

@inproceedings{BUT7998,
  author="Petr {Létal} and Jitka {Brüstlová} and Pavel {Tománek} and Pavel {Dobis} and Lubomír {Grmela}",
  title="Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)",
  booktitle="Proc. of 5th Int.Conf. Electronic devices and systems 1998",
  year="1998",
  pages="4",
  address="Brno",
  isbn="80-214-1198-8"
}