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BILALOV, B. KARDASHOVA, G. ABDURAZAKOV, A. SOBOLA, D. ARKHIPOV, A.
Originální název
Peculiarities of the obtaining process of silicon carbide and aluminum nitride
Anglický název
Zvláštnosti procesu tvorby SiC a AlN
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
ruština
Originální abstrakt
Obtaining of solid solutions of SiC-AlN system with predictable composition and with expected physical-chemical properties is only possible on the basis of whole and detail investigation of interaction character between components of solid solution and by study of connection between composition and properties. The objects of this study are samples of thin films of aluminum nitride and its solid solutions formatted on silicon carbide substrates by sublimation of source of polycrystalline (SiC)1-x(AlN)x solid solution (x = 0.25 and x=1) at 2100-2300 K in nitrogen atmosphere and at atmosphere pressure.
Anglický abstrakt
Klíčová slova
sublimation, solid solution, thin layer, source, target
Klíčová slova v angličtině
sublimation, solid solution, thin layer, target
Autoři
BILALOV, B.; KARDASHOVA, G.; ABDURAZAKOV, A.; SOBOLA, D.; ARKHIPOV, A.
Rok RIV
2011
Vydáno
4. 5. 2011
Nakladatel
Southwest state university
Místo
Kursk
ISBN
978-5-7681-0642-3
Kniha
Proceedings of Internationalscientific conference: Advanced technologies, equipment and analytical systems for material sciences and nanomaterials
Edice
K.V.Kozitov
Číslo edice
4.05.2011
Strany od
829
Strany do
831
Strany počet
3
BibTex
@inproceedings{BUT89667, author="Bilal {Bilalov} and Gulnara {Kardashova} and Abdula {Abdurazakov} and Dinara {Sobola} and Alexandr {Arkhipov}", title="Peculiarities of the obtaining process of silicon carbide and aluminum nitride", booktitle="Proceedings of Internationalscientific conference: Advanced technologies, equipment and analytical systems for material sciences and nanomaterials", year="2011", series="K.V.Kozitov", number="4.05.2011", pages="829--831", publisher="Southwest state university", address="Kursk", isbn="978-5-7681-0642-3" }