Study of Microplasma Noise Statistical Characteristics for GaAsP Diodes

článek ve sborníku ve WoS nebo Scopus

angličtina

Characteristics of an impulse random process which arises in consequence of the bi-stable nature of the microplasma conductivity in GaAsP light emitting diode p-n junctions are dealt with in the present paper. Experiments show that the microplasma bi-stable behaviour may be described as a two-state stochastic process of a generation-recombination type (G-R process), which is Markovian, provided that the diode is operated in low-impedance load conditions. Theoretical solution of the model has been carried out, from which statistical characteristics of the process have subsequently been derived. Based on the theoretical analysis results, a methodology to be applied to the above-mentioned characteristic evaluation has been worked out. Experimental study of these characteristics has followed. The theoretical analysis shows that the process characteristics depend on the g and r parameters. The quantities g and r are the respective generation and recombination coefficients (turn-on probability p01 and turn-off probability p10), both depending on the applied voltage and temperature for stationary random processes. Our experiments are confirming a very close agreement between the theoretically derived and experimental characteristics.

Microplasma noise, Generation-recombination process, PN junction, Avalanche

KOKTAVÝ, P.

2003

18. 8. 2003

CNRL, s.r.o.

Prague

80-239-1055-1

Proceedings of the 17th International Conference Noise and Fluctuation ICNF 2003

437

440

4