Microplasma Noise in Semiconductor GaAsP Diodes

článek ve sborníku ve WoS nebo Scopus

angličtina

Random two-level or multiple-level current impulses may occur in electronic devices containing reverse biased p-n junctions in a certain operating mode. These impulses are usually rectangular, featuring constant amplitude, random pulse width and pulse origin time points. This phenomeno is generally ascribed to local avalanche breakdowns originating in p-n junction defect regions called microplasma regions. Based on experiment results, a two-state model of stchastic generation-recombination prcoess has been elaborated for the two-level impulse noise allowing to derive some statistical characteristics of this process. It can be shown that the distribution of the probability density w(t0) of the impulse separation t0 and the probability density w(t1) of the impulse width t1 have exponential couses. The power spectral density of the noise current is of a G-R process type and depends on the particular microplasma properties. From the viewpoint of noise diagnostics, the most imporant features are the spectral density Su and noise current In versus reverse current Ir pltos, because each local extreme of these plots corresponds to an active microplasma region. Thus obtained resluts may be used for p-n junction non-destructive diagnostics and quality assessment.

microplasma, noise, nonlinearity

KOKTAVÝ, P., KOKTAVÝ, B., ŠIKULA, J.

2003

1. 1. 2003

CNRL

Brno

80-238-9094-8

Noise nad Non-linearity Testing of Modern Electronic Components

85

88

4