Detail publikace

Scanning tunneling microscopy of high-resistance SiC-AlN solid solutions

DALLAEVA, D. TOMÁNEK, P. RAMAZANOV, S.

Originální název

Scanning tunneling microscopy of high-resistance SiC-AlN solid solutions

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The purpose of the paper is a study of films morphology of silicon carbide and aluminum nitride solid solution. The films were obtained by magnetron sputtering. The described method allows solving a measure foreground task of electronics at nanometer and atomic levels.

Klíčová slova

Silicon carbide, Aluminum nitride, Atomic force microscopy, Scanning tunneling microscopy, Thin film

Autoři

DALLAEVA, D.; TOMÁNEK, P.; RAMAZANOV, S.

Rok RIV

2012

Vydáno

11. 10. 2012

Nakladatel

Vysoke uceni technicke v Brne, Fakulta elektrotechniky a komunikacnich technologii, Ustav fyziky

Místo

Brno

ISBN

978-80-214-4594-9

Kniha

New trends in physics 2012

Strany od

149

Strany do

152

Strany počet

4

BibTex

@inproceedings{BUT94390,
  author="Dinara {Sobola} and Pavel {Tománek} and Shihgasan {Ramazanov}",
  title="Scanning tunneling microscopy of high-resistance SiC-AlN solid solutions",
  booktitle="New trends in physics 2012",
  year="2012",
  pages="149--152",
  publisher="Vysoke uceni technicke v Brne, Fakulta elektrotechniky a komunikacnich technologii, Ustav fyziky",
  address="Brno",
  isbn="978-80-214-4594-9"
}