Detail publikace

Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy

DALLAEVA, D. TOMÁNEK, P. BILALOV, B.

Originální název

Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The purpose of the study is formation and investigation of SiC/(SiC)1-x(AlN)x structure by scanning electron microscopy and atomic force microscopy. Sublimation epitaxy of the policrystalline sourse of (SiC)1-x(AlN)x was used. The optimal conditions of sublimation process are defined. These structures could be used as substrate for desing of semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, it also can be uses for production of transistors with high mobility of electrons and also for creation of blue and ultraviolet lith emmiters, in light-emmited diodes and laser diodes.

Klíčová slova

compostion, morphology, temperature, sublimation

Autoři

DALLAEVA, D.; TOMÁNEK, P.; BILALOV, B.

Rok RIV

2012

Vydáno

16. 10. 2012

Nakladatel

Institute of Plasma Physics AS CR, v.v.i. - TOPTEC

Místo

Prague 8

ISBN

978-80-87026-02-1

Kniha

Optics and Measurement 2012

Edice

first edition

Číslo edice

16.10.2012

Strany od

5

Strany do

8

Strany počet

4

BibTex

@inproceedings{BUT94655,
  author="Dinara {Sobola} and Pavel {Tománek} and Bilal {Bilalov}",
  title="Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy",
  booktitle="Optics and Measurement 2012",
  year="2012",
  series="first edition",
  number="16.10.2012",
  pages="5--8",
  publisher="Institute of Plasma Physics AS CR, v.v.i. - TOPTEC",
  address="Prague 8",
  isbn="978-80-87026-02-1"
}