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DALLAEVA, D. KOROSTYLEV, E. BILALOV, B. TOMÁNEK, P.
Originální název
Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy
Typ
článek v časopise - ostatní, Jost
Jazyk
angličtina
Originální abstrakt
The objective of the study is a growth of SiC/(SiC)1-x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1-x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K llows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.
Klíčová slova
CdS, AlN, thin layer, proximal microscopy
Autoři
DALLAEVA, D.; KOROSTYLEV, E.; BILALOV, B.; TOMÁNEK, P.
Rok RIV
2013
Vydáno
3. 5. 2013
Nakladatel
EDP Sciences
Místo
Les Ullis, France
ISSN
2100-014X
Periodikum
EPJ Web of Conferences
Ročník
48
Číslo
1
Stát
Francouzská republika
Strany od
Strany do
4
Strany počet
URL
https://www.epj-conferences.org/articles/epjconf/abs/2013/09/epjconf_OAM2012_00002/epjconf_OAM2012_00002.html
Plný text v Digitální knihovně
http://hdl.handle.net/11012/193660
BibTex
@article{BUT99853, author="Dinara {Sobola} and Evgenij {Korostylev} and Bilal {Bilalov} and Pavel {Tománek}", title="Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy", journal="EPJ Web of Conferences", year="2013", volume="48", number="1", pages="1--4", doi="10.1051/epjconf/20134800002", issn="2100-014X", url="https://www.epj-conferences.org/articles/epjconf/abs/2013/09/epjconf_OAM2012_00002/epjconf_OAM2012_00002.html" }