ELECTRIC MODEL OF REVERSE-BIASED SILICON SOLAR CELLS

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angličtina

This paper is intended to present the results of our research whose objective consists in describing the behaviour of silicon solar cells, which have been prepared using the diffusion technology. In general, heavy current densities are being observed in the reverse biased specimens. We suggest the physical nature of an unconventional behavior of the solar cells without apparent local avalanche and thermal breakdowns by means of electrical model. The model is based on our knowledge of the solar cell production technology, in which the solar cell p+n junction arises through the diffusion of gaseous dopants on the top as well as at the bottom of the substrate. In consequence, an n+pn+ bipolar transistor structure is arising. A mathematical description of the equivalent circuit model will be put forward. By approximating the measured curves by our theoretical circuit function we managed to get new pieces of information concerning the processes taking place in the specimen.

Solar cell, Excess current, Reverse bias, Local defect, Edge isolation

MACKŮ, R.; ŠICNER, J.; KOKTAVÝ, P.

2012

11. 10. 2012

Litera Brno

Brno

978-80-214-4594-9

New Trends in Physics

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